Light-emitting-device package and production method therefor

ABSTRACT

A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

TECHNICAL FIELD

The present invention relates to an electronic device, and particularly,to a light-emitting-device package.

BACKGROUND ART

In general, a light emitting device is used as a light source of abacklight module in an electronic device, for example, a display device,or a light source of a lighting device. The light emitting device may bepackaged in various forms so as to be combined with the display deviceor mounted in the lighting device. Research on improving light emissionefficiency according to light emitted in the light-emitting-devicepackage has been conducted.

DISCLOSURE Technical Problem

In order to improve light emission efficiency of a light emitting deviceemitting ultraviolet (UV) light emitting UV light among thelight-emitting-device packages in the related art, it is necessary tooptimize a material or a structure of a package considering reflectanceof UV light.

An object of the present invention is to solve several problemsincluding the aforementioned problems, and more particularly, to providea light-emitting-device package capable of improving reflectance ofultraviolet light emitted from a light emitting device. However, theaforementioned objects are illustrative, and the scope of the presentinvention is not limited by the aforementioned objects.

Technical Solution

According to one aspect of the present invention, alight-emitting-device package includes: a metal substrate; a lightemitting device that is disposed on a first surface of the metalsubstrate and emits at least ultraviolet light; a pair of electrodesspaced apart from each other on at least the first surface of the metalsubstrate, and electrically connected to the light emitting device; andan insulating layer between the metal substrate and the pair ofelectrodes. Ultraviolet reflectance of the first surface of the metalbody is higher than ultraviolet reflectance of the pair of electrodes.

In the light-emitting-device package, 70% or more but less than 100% ofthe entire area of a light emitting surface of the first surface of themetal substrate involved in ultraviolet-light emission or reflection maybe exposed from the pair of electrodes and the insulating layer.

In the light-emitting-device package, reflectance of the metal substratewith respect to ultraviolet light in a wavelength range from 200 nm to380 nm may be 85% or more but less than 100%.

In the light-emitting-device package, the metal substrate may includealuminum. Further, the insulating layer may include an aluminum oxideformed by anodizing the aluminum of the metal substrate.

In the light-emitting-device package, the aluminum on at least a seatingsurface of the metal substrate may be exposed from the pair ofelectrodes and the insulating layer on the seating surface, so that 85%or more of ultraviolet light incident into or reflected from the seatingsurface may be reflected or re-reflected from the seating surface.

In the light-emitting-device package, the first surface of the metalsubstrate may be flat.

In the light-emitting-device package, the metal substrate may include acavity in a direction of the first surface, the light emitting devicemay be mounted on a bottom surface within the cavity, and the lightemitting surface may include the bottom surface and a lateral surfacewithin the cavity.

In the light-emitting-device package, the insulating layer and the pairof electrodes may be disposed outside the cavity.

In the light-emitting-device package, the insulating layer and the pairof electrodes are extended from the first surface of the metal substrateand onto, a second surface opposed to the first surface.

According to another aspect of the present invention, alight-emitting-device package may include: a metal substrate; aninsulating layer that covers the Metal substrate; an aluminum reflectivelayer on a light emitting device seating part of the insulating layer; afirst electrode layer provided at one side of the insulating layer; asecond electrode layer provided at the other side of the insulatinglayer; and a light emitting device that is seated on the light emittingdevice seating part, and is electrically connected to the firstelectrode layer and the second electrode layer.

In the light-emitting-device package, the metal substrate may include analuminum component, and the insulating layer may be an aluminum oxidelayer.

In the light-emitting-device package, the aluminum reflective layer maybe in a substantially circular shape or a quadrangular shape anddisposed around a rear surface of the light emitting device so as toreflect light generated by the light emitting device.

In the light-emitting-device package, the aluminum reflective layer maybe provided between the first electrode layer and the insulating layerso as to be electrically connected to the first electrode layer.

In the light-emitting-device package, the aluminum reflective layer maybe provided with an electrode separation line at a center portion of thealuminum reflective layer so as to be insulated from the secondelectrode layer, and include a first reflective layer installed at oneside and a second reflective layer at the other side, relative to theelectrode separation line.

In the light-emitting-device package, the first electrode layer may bedisposed on the insulating layer in a shape extending from one side of afront surface of the metal substrate to one side of a rear surface ofthe metal substrate, and the second electrode layer may be disposed onthe insulating layer in a shape extending from the other side of thefront surface of the metal substrate to the other side of the rearsurface of the metal substrate.

In the light-emitting-device package, the metal substrate may includetwo or more marginal protrusions that protrude by a marginal length froma lateral surface at a lateral side.

According to still another aspect of the present invention, alight-emitting-device package may include: a metal substrate; aninsulating layer that covers the metal substrate; a light emittingdevice seated on a light emitting device seating part of the insulatinglayer; a first electrode layer provided at one side of the insulatinglayer and electrically connected to the light emitting device; a secondelectrode layer provided at the other side of the insulating layer andelectrically connected to the light emitting device; and marginalprotrusions provided at a lateral side of the metal substrate, andprotruding by a marginal length from a lateral surface of the metalsubstrate in a lateral direction.

According to yet another aspect of the present invention, a method ofmanufacturing a light-emitting-device package may include: preparing ametal substrate strip including aluminum; oxidizing the metal substratestrip so that an insulating layer is formed on the metal substratestrip; forming an aluminum reflective layer on a light emitting deviceseating part of the insulating layer; providing a first electrode layerat one side of the insulating layer and providing a second electrodelayer at the other side of the insulating layer; and seating a lightemitting device on the light emitting device seating part.

The method of manufacturing the light-emitting-device package accordingto the aspect of the present invention may further include cutting themetal substrate strip so that marginal protrusions protruding by amarginal length from a lateral surface of the metal substrate in alateral direction are formed at a lateral side of the metal substratestrip.

Advantageous Effects

According to the light-emitting-device packages according to theexemplary embodiments of the present invention, which is configured asdescribed above, the metal substrate having high reflectance withrespect to UV light is exposed from the light emitting surface withinthe package, so that it is possible to improve UV light emissionefficiency of the package. The effect is described for illustration, andthe scope of the present invention is not limited by the effects.

DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic perspective view illustrating an ultravioletlight-emitting-device package according to an exemplary embodiment ofthe present invention.

FIG. 2 is a cross-sectional view taken along line II-II of theultraviolet light-emitting-device package of FIG. 1.

FIG. 3 is a schematic cross-sectional view illustrating alight-emitting-device package according to another exemplary embodimentof the present invention.

FIG. 4 is a schematic cross-sectional view illustrating alight-emitting-device package according to still another exemplaryembodiment of the present invention.

FIG. 5 is a schematic perspective view illustrating an ultravioletlight-emitting-device package according to yet another exemplaryembodiment of the present invention.

FIG. 6 is a cross-sectional view taken along line VI-VI of the UVlight-emitting-device package of FIG. 5.

FIG. 7 is a schematic cross-sectional view illustrating alight-emitting-device package according to still yet another exemplaryembodiment of the present invention.

FIG. 8 is a schematic cross-sectional view illustrating alight-emitting-device package according to a further exemplaryembodiment of the present invention.

FIG. 9 is a conceptual diagram schematically illustrating a backlightmodule according to another further exemplary embodiment of the presentinvention.

FIG. 10 is a graph illustrating reflectance according to an electrodemetal.

FIG. 11 is an exploded perspective view illustrating a part of alight-emitting-device package according to some exemplary embodiments ofthe present invention.

FIG. 12 is a cross-sectional view taken along line II-II of thelight-emitting-device package of FIG. 11.

FIG. 13 is a top plan view illustrating the light-emitting-devicepackage of FIG. 11.

FIG. 14 is a top plan view illustrating a light-emitting-device packageaccording to some other exemplary embodiments of the present invention.

FIG. 15 is a top plan view illustrating a light-emitting-device packageaccording to some other exemplary embodiments of the present invention.

FIGS. 16 to 21 are cross-sectional views sequentially illustrating amanufacturing process of the light-emitting-device package according tosome exemplary embodiments of the present invention.

FIG. 22 is a flowchart illustrating a method of manufacturing thelight-emitting-device package according to some exemplary embodiments ofthe present invention.

BEST MODE

Hereinafter, exemplary embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.However, the present invention is not limited to exemplary embodimentsto be disclosed below, but may be implemented in various forms differentfrom each other, and the exemplary embodiments are provided so as tocompletely disclose the present invention and make those skilled in theart fully recognize the scope of the invention. Further, for convenienceof the description, sizes of constituent elements may be exaggerated ordecreased in the drawings.

In the exemplary embodiments below, an x-axis, a y-axis, and a z-axisare not limited to three axes on an orthogonal coordinate system, andmay be interpreted as a broad meaning including the three axes on theorthogonal coordinate system. For example, the x-axis, the y-axis, andthe z-axis may be orthogonal to one another, but may also refer todifferent directions which are not orthogonal to one another.

FIG. 1 is a schematic perspective view illustrating an ultravioletlight-emitting-device package according to an exemplary embodiment ofthe present invention. FIG. 2 is a cross-sectional view taken along lineII-II of the ultraviolet light-emitting-device package of FIG. 1.

Referring to FIGS. 1 and 2, a light emitting device 50 may be disposedon a metal substrate 110. For example, the light emitting device 50 maybe mounted on the metal substrate 110 with an adhesive member 55interposed therebetween. The light emitting device 50, which is a devicefor receiving an electric signal and emitting light, may be used as alight source of various electronic devices, for example, a displaydevice or a lighting device. For example, the light emitting device 50may be formed of a diode of a compound semiconductor, and the lightemitting device 50 may be called a light emitting diode (LED).

In the exemplary embodiment, the light emitting device 50 may emit atleast ultraviolet (UV) light, and also be called a UV LED from the pointof mainly emitting UV light. Here, UV light may refer to shortwavelength light in a wavelength range from 10 to 380 nm, and morespecifically, may also refer to far ultraviolet light in a wavelengthfrom 200 nm to 380 nm. For example, the light emitting device 50 foremitting UV light may be manufactured by using a nitride-based compoundsemiconductor, such as GaN, AlGaN, InGaN, and InAlGaN.

The metal substrate 110 may serve as a substrate in which the lightemitting device 50 is mounted, and approximately form an appearance ofthe package. The metal substrate 110 may include a first surface 112 onwhich the light emitting device 50 is seated, and a second surface 114at an opposite side of the first surface 112. In the present exemplaryembodiment, the first surface 112 may be flat, and thus, light, that is,UV light, emitted from the light emitting device 50, may be emittedupwardly from the first surface 112, approximately in a +z-axisdirection. For example, a part of a corner portion is cut andillustrated in FIG. 1 so as to expose the first surface 112.

The metal substrate 110 may be formed of a metal material so as toincrease reflection of UV light emitted from the light emitting device50 and effectively emit heat generated by the light emitting device 50to the outside. For example, the metal substrate 110 may include a metalhaving reflectance of 85% or more and less than 100% in a wavelengthrange of short wavelength UV light from 10 to 380 nm, particularly, in awavelength range of far wavelength UV light from 200 to 380 nm. In orderto sufficiently re-reflect UV light re-reflected to the metal substrate110 and improve light emission efficiency of the UV light, UVreflectance of the metal substrate 110 needs to be 85% or more.

For example, the metal substrate 110 may include aluminum (Al) havinghigh thermal conductivity and high UV reflectance. As illustrated inFIG. 10, aluminum shows high reflectance in a UV wavelength range, aswell as a visible light wavelength range. Particularly, it can be seenthat aluminum has high reflectance of 85% or more with respect to UVlight in the wavelength range of 200 to 380 nm. By contrast, gold (Au)shows high reflectance with respect to light having a relatively largewavelength range, but shows low reflectance of 40% or less with respectto light in a wavelength of 500 nm or less. Silver (Au) shows highreflectance of 85% or more with respect to visible light in a wavelengthof 400 nm or more, but shows reflectance of less than 85% with respectto UV light in a wavelength of 380 nm or less, and particularly, showslow reflectance of 30% or less around a wavelength of about 300 nm andin a wavelength of about 300 nm or less.

In the meantime, in a modified example of the present exemplaryembodiment, a center portion of the second surface 114 at the oppositeside of the first surface 112 of the metal substrate 110 has aconcavo-convex structure to increase a surface area thereof, so thatheat generated by the light emitting device 50 may be effectivelyemitted to the outside.

A pair of electrodes 130 and 135 may be disposed to be spaced apart fromeach other on at least the first surface 112 of the metal substrate 110.The electrodes 130 and 135 may be electrically connected to parts of thelight emitting device 50 having different polarities to serve asinput/output terminals of the light emitting device 50. For example, theelectrodes 130 and 135 may be disposed on the first surface 112 of themetal substrate 110 so as to have a predetermined pattern, and forexample, center portions of the electrodes 130 and 135 may approximatelyhave shapes protruding toward the light emitting device 50 so as to beconnected with the light emitting device 50. Further, the electrodes 130and 135 may be further extended onto the second surface 114 from thefirst surface 112 along both lateral walls.

A dam structure 115 may be disposed on the electrodes 130 and 135 so asto limit a light emitting part. For example, the dam structure 155 maybe disposed on the electrodes 130 and 135 to have a ring shapesurrounding the light emitting device 50. Accordingly, an internalregion of the dam structure 155 may be a light emitting part in that theinternal region of the dam structure 155 is associated with lightemission or reflection of the light emitting device 50. In the meantime,when light emitted from the light emitting device 50 is reflected in adirection of the light emitting device 50, the light may be re-reflectedfrom the internal portion of the dam structure 155 of the first surface112, that is, a light emitting surface 113, to a target direction, thatis, approximately in the +Z-axis direction. Accordingly, the lightemitting surface 113 may be associated with light emission and/orreflection of the light emitting device 50.

Insulating layers 120 and 125 may be provided between the metalsubstrate 110 and the electrodes 130 and 135 so as to insulate the metalsubstrate 110 from the electrodes 130 and 135. For example, theinsulating layers 120 and 125 may be formed on the metal substrate 110,and the electrodes 130 and 135 may be formed on the insulating layers120 and 125. In this case, the electrodes 130 and 135 may be formed soas to be disposed within the insulating layers 120 and 125 or formed soas to overlap the insulating layers 120 and 125 according to amanufacturing method.

At least a pair of bonding wires 140 and 145 may connect the lightemitting device 50 with the electrodes 130 and 135. Accordingly, thelight emitting device 50 may be electrically connected with an externaldevice through the bonding wires 140 and 145 and the electrodes 130 and135.

In addition, in order to protect the light emitting device 50 fromexternal moisture, and the like, a filler (not illustrated) may beprovided on the metal substrate 110 within the dam structure 155 so asto cover the light emitting device 50. In view of a point that the lightemitting device 50 emits UV light, and the UV light is used as a lightsource as it is, a fluorescent substance may be omitted from the filler.However, exceptionally, when the light emitting device 50 includesanother light other than UV light, an appropriate fluorescent substancemay be added into the filler in order to control the light.

In the UV light-emitting-device package according to the presentexemplary embodiment, UV reflectance of the first surface 112 of themetal substrate 110 may be selected to be higher than UV reflectance ofthe electrodes 130 and 135 and the insulating layers 120 and 125.Accordingly, at least 70% or more of an entire area of the lightemitting surface 113 involved in UV light emission or reflection needsto be exposed from the electrodes 130 and 135 and the insulating layers120 and 125. In the present exemplary embodiment, the insulating layers120 and 125 are removed from the light emitting surface 113 other thanthe portions, in which the electrodes 130 and 135 are disposed, in thedam structure 155, so that the metal substrate 110 may be exposed.

That is, 70% or more of the light emitting surface is exposed withaluminum having high reflectance with respect to UV light, therebysufficiently improving UV light emission efficiency of the UVlight-emitting-device package. However, in view of a point that thelight emitting device 50 is seated on the first surface 112, an exposurearea of the light emitting surface 113 may be difficult to be 100% evenwhen the electrodes 130 and 135 and the insulating layers 120 and 125are not disposed on the first surface 112.

In the present exemplary embodiment in order to increase an exposurearea of the aluminum material on the first surface 112 of the metalsubstrate 110, the electrodes 130 and 135 may be restricted at an edgeportion of the first surface 112 and formed in a stripe shape extendedin, for example, a +y-axis direction. As a modified example of thepresent exemplary embodiment, in order to decrease connection lengths bythe bonding wires 140 and 145, the electrodes 130 and 135 may also beformed in stripe shapes extended in a longitudinal direction, forexample, a +x-axis direction, at both sides of the light emitting device50. In another modified example of the present exemplary embodiment, theinsulating layers 120 and 125 and the electrodes 130 and 135 may bemodified to have various shapes within a range occupying an area of 30%or less of the light emitting surface 113.

Hereinafter, a method of manufacturing the UV light-emitting-devicepackage according to the present exemplary embodiment will be described.

First, the metal substrate 110 having the first surface 112 and thesecond surface 114 may be prepared. Next, the light emitting device 50may be mounted on the first surface 112 of the metal substrate 110.Next, the insulating layers 120 and 125 may be formed on the metalsubstrate 110, and the metal layers 130 and 135 may be formed on theinsulating layers 120 and 125.

For example, the insulating layers 120 and 125 may be formed of anappropriate insulating material, for example, an oxide or a nitride. Forexample, the insulating layers 120 and 125 may be formed by using ananodizing method, a printing method, a coating method, and the like. Forexample, when the metal substrate 110 is formed of an alumina material,an aluminum oxide, that is, an alumina layer, may be formed on the metalsubstrate 110 through an anodizing treatment. For example, a maskpattern for anti-oxidation may be formed before the anodizing treatment,so that it is possible to form the insulating layers 120 and 125 formedof the alumina material by the anodizing treatment. For another example,the insulating layers 120 and 125 may also be formed by patterning thealumina layer by an appropriate method after the anodizing treatment.

The electrodes 130 and 135 may be formed on the insulating layers 120and 125 by using a printing method, a plating method, or the like. Forexample, the electrodes 130 and 135 may be formed of a metal material,such as copper (Cu), and in order to improve reflectance, the electrodes130 and 135 may be coated with a material having high reflectance, suchas, silver (Ag), as necessary. For example, the electrodes 130 and 135may be formed so as to be restricted within the insulating layers 120and 125 by using a printing method. For another example, the insulatinglayers 120 and 125 and the electrodes 130 and 135, which are verticallyaligned with each other, may also be formed by forming an alumina layerby using the anodizing method, forming a copper layer on the aluminalayer by using a plating method, and then appropriately patterning thecopper layer.

Next, the dam structure 155 may be formed on the electrodes 130 and 135,and the bonding wires 140 and 145 may be bonded so as to connect thelight emitting device 50 with the electrodes 130 and 135. For example,an upper portion of the light emitting device 50 and upper portions ofthe electrodes 130 and 135 may be connected by using a wire bondingmethod. The bonding wires 140 and 145 may include an appropriateconductive substance, for example, gold, silver, and copper.

FIG. 3 is a schematic cross-sectional view illustrating a UVlight-emitting-device package according to another exemplary embodimentof the present invention. Some configurations of thelight-emitting-device package according to the present exemplaryembodiment are modified from the UV light-emitting-device package ofFIGS. 1 and 2, so that overlapping descriptions in the two exemplaryembodiments will be omitted.

Referring to FIG. 3, insulating layers 120 a and 125 a and electrodes130 a and 135 a may be disposed in stripe patterns at an edge portion ona first surface 112 of a metal substrate 110.

FIG. 4 is a schematic cross-sectional view illustrating a UVlight-emitting-device package according to still another exemplaryembodiment of the present invention. Some configurations of thelight-emitting-device package according to the present exemplaryembodiment are modified from the UV light-emitting-device package ofFIGS. 1 and 2, so that overlapping descriptions in the two exemplaryembodiments will be omitted.

Referring to FIG. 4, insulating layers 120 b and 125 b and electrodes130 b and 135 b may be extended from a first surface 112 of a metalsubstrate 110 onto a second surface 114 at an opposite side of the firstsurface 112. For example, the insulating layers 120 b and 125 b and theelectrodes 130 b and 135 b may be extended from an edge portion of thefirst surface 112 of the metal substrate 110 onto an edge portion of thesecond surface 114 through a lateral surface of the metal substrate 110.By this configuration, when the UV light-emitting-device package ismounted on a board, such as a printed circuit board, portions of theelectrodes 130 b and 130 b extended onto the second surface 114 may becontact points for connecting the printed circuit board and the package.Accordingly, the UV light-emitting-device package according to thepresent exemplary embodiment may be mounted and modulated in the printedcircuit board, and the like without an additional connection means.

FIG. 5 is a schematic perspective view illustrating a UVlight-emitting-device package according to yet another exemplaryembodiment of the present invention. FIG. 6 is a cross-sectional viewtaken along line VI-VI of the ultraviolet light-emitting-device packageof FIG. 5.

Referring to FIGS. 5 and 6, a light emitting device 50 may be disposedon a metal substrate 210. For example, the light emitting device 50 maybe mounted on the metal substrate 210 with an adhesive member 55interposed therebetween. The light emitting device 50 may mainly emit UVlight, and in this case, the light emitting device 50 may also be calleda UV LED.

The metal substrate 210 may serve as a substrate in which the lightemitting device 50 is mounted, and approximately form an appearance ofthe package. The metal substrate 110 may have a first surface 212 onwhich the light emitting device 50 is seated, and a second surface 214at an opposite side of the first surface 212. The metal substrate 210may include a cavity 250 in a direction of the first surface 212, andthe light emitting device 50 may be seated within the cavity 250. Forexample, the cavity 250 may be formed while being recessed from aprotrusion portion of the first surface 212 in a direction of the secondsurface 214 by a predetermined depth, and thus, a concave portion 215including a bottom surface 218 and a lateral surface 216 within thecavity 250 may be defined. By the cavity 250, the first surface 212 maybe widely interpreted so that the first surface 212 includes aprotruding surface at an external side of the cavity 250 and the bottomsurface 218 and the lateral surface 216 within the cavity 250. Forreference, in order to expose the first surface 212, a part of a cornerportion is cut and illustrated in FIG. 5.

For example, the light emitting device 50 may be mounted on the bottomsurface 218 within the cavity 250. Accordingly, light, for example, UVlight, emitted from the light emitting device 50 may be directly emittedin an upper direction, that is, an approximately +Z-axis direction, ofthe first surface 212, or reflected from the lateral surface 216 of theconcave portion 215 to be emitted in the upper direction. In this case,a light emitting surface related to UV light emission and/or reflectionmay include the bottom surface 218 and the lateral surface 216 withinthe cavity 250 as a narrow meaning. In addition, in view of a point thatUV light reflected to the first surface 212 portion at the external sideof the cavity 250 may be re-reflected again in the upper direction, thelight emitting surface may widely mean to include the first surface 212over an internal side and the external side of the cavity 250.

The metal substrate 210 may be formed of a metal material in order toimprove reflection of UV emitted from the light emitting device 50, andeffectively emit heat generated by the light emitting device 50 to theoutside. For example, the metal substrate 210 may include aluminum (Al)having high thermal conductivity and high UV reflectance. A selection ofa material of the metal substrate 210 may refer to the description ofthe metal substrate 110 of FIGS. 1 and 2.

In the meantime, in a modified example of the present exemplaryembodiment, a center portion of the second surface 214 at an oppositeside of the first surface 212 of the metal substrate 210 has aconcavo-convex structure to increase a surface area thereof, so thatheat generated by the light emitting device 50 may be effectivelyemitted to the outside.

A pair of electrodes 230 and 235 may be disposed to be spaced apart fromeach other on at least the first surface 212 of the metal substrate 210with the cavity 250 interposed therebetween. The electrodes 230 and 235may be electrically connected to parts of the light emitting device 50having different polarities to serve as input/output terminals of thelight emitting device 50. For example, the electrodes 230 and 235 may bedisposed so as to have predetermined patterns on the protruding surfaceof the first surface 212 at the external side of the cavity 250. In themodified example of the present exemplary embodiment, the electrodes 230and 235 may also be further extended to the lateral surface 216 of theconcave portion 215 within the cavity 250, and even further, to thebottom surface 218.

Insulating layers 220 and 225 may be provided between the metalsubstrate 210 and the electrodes 230 and 235 so as to insulate the metalsubstrate 210 from the electrodes 230 and 235. For example, theinsulating layers 220 and 225 may be formed on the metal substrate 210,and the electrodes 230 and 235 may be formed on the insulating layers220 and 225. In this case, the electrodes 230 and 235 may be formed soas to be disposed within the insulating layers 220 and 225 or formed soas to overlap the insulating layers 220 and 225 according to amanufacturing method.

At least a pair of bonding wires 240 and 245 may connect the lightemitting device 50 with the electrodes 230 and 235. Accordingly, thelight emitting device 50 may be electrically connected with an externaldevice through the bonding wires 240 and 245 and the electrodes 230 and235.

In addition, in order to protect the light emitting device 50 fromexternal moisture, and the like, a filler (not illustrated) may beprovided on the metal substrate 210 within the cavity 250 so as to coverthe light emitting device 50. In view of a point that the light emittingdevice 50 emits UV light, and the UV light is used as a light source asit is, a fluorescent substance may be omitted from the filler. However,exceptionally, when the light emitting device 50 includes another lightother the UV light, an appropriate fluorescent substance may be addedinto the filler in order to control the light.

In the UV light-emitting-device package according to the presentexemplary embodiment, UV reflectance of the first surface 212 of themetal substrate 210 may be selected to be higher than UV reflectance ofthe electrodes 230 and 235 and the insulating layers 220 and 225.Accordingly, 70% or more of an entire area of the light emitting surfaceinvolved in UV light emission or reflection, for example, the bottomsurface 218 and the lateral surface 216 of the concave portion 215 in anarrow meaning, or the entire first surface 212 in a broad meaning needsto be exposed from the electrodes 230 and 235 and the insulating layers220 and 225.

That is, only when 70% or more of the light emitting surface is exposedwith aluminum having high reflectance with respect to UV light, it ispossible to sufficiently improve UV light emission efficiency of the UVlight-emitting-device package. In the meantime, in view of a point thatthe light emitting device 50 is seated on the first surface 212, anexposure area of the first surface 212 is difficult to be 100% even whenthe electrodes 230 and 235 and the insulating layers 220 and 225 are notdisposed on the first surface 212.

For example, in order to increase an area of the light emitting surface,the insulating layers 220 and 225 and the electrodes 230 and 235 may beprovided in predetermined patterns to the external side of the cavity250. Shapes of the insulating layers 220 and 225 and the electrodes 230and 235 may refer to the description about the insulating layers 120 and125 and the electrodes 130 and 135 of FIGS. 1 and 2, and further, may bevaried within a range occupying 30% or less of an area of the lightemitting surface.

For another example, in order to make 85% or more of the UV lightincident into or reflected from the seating surface be reflected orre-reflected to the seating surface, aluminum on at least the seatingsurface may be disposed on the seating surface of the metal substrate110, for example, the bottom surface 218 of the concave portion 215, sothat the aluminum on at least the seating surface is exposed from theelectrodes 130 and 135 and the insulating layers 120 and 125.

Hereinafter, a method of manufacturing the UV light-emitting-devicepackage according to the present exemplary embodiment will be described.

First, the metal substrate 210 having the first surface 212 and thesecond surface 214, and the cavity 250 provided in the first surface 212may be prepared. For example, the metal substrate 210 may be directlymolded and formed by a die casting method, or may also be formed byprocessing the cavity 250 in a plane type. Next, the light emittingdevice 50 may be mounted on the bottom surface 218 within the cavity 250with the adhesive member 55 interposed therebetween.

An operation of forming the insulating layers 220 and 225, an operationof forming the electrodes 230 and 235, and an operation of forming thebonding wires 240 and 245, which are sequentially performed, may referto the operation of forming the insulating layers 120 and 125, anoperation of forming the electrodes 130 and 135, and an operation offorming the bonding wires 140 and 145, which are described withreference to FIGS. 1 and 2.

FIG. 7 is a schematic cross-sectional view illustrating alight-emitting-device package according to still yet another exemplaryembodiment of the present invention. Some configurations of thelight-emitting-device package according to the present exemplaryembodiment are modified from the UV light-emitting-device package ofFIGS. 5 and 6, so that overlapping descriptions in the two exemplaryembodiments will be omitted.

Referring to FIG. 7, a metal substrate 210 may include a bent portion ona lateral wall thereof, and insulating layers 220 a and 225 b andelectrodes 230 a and 235 b may be disposed at an edge portion on a firstsurface 212 of the metal substrate 210.

FIG. 8 is a schematic cross-sectional view illustrating alight-emitting-device package according to a further exemplaryembodiment of the present invention. Some configurations of thelight-emitting-device package according to the present exemplaryembodiment are modified from the UV light-emitting-device package ofFIGS. 5 and 6, so that overlapping descriptions in the two exemplaryembodiments will be omitted.

Referring to FIG. 8, a metal substrate 210 may include a bent portion ona lateral wall thereof, and insulating layers 220 b and 225 b andelectrodes 230 b and 235 b may be extended from a first surface 212 ofthe metal substrate 210 onto a second surface 214 that is an oppositeside of the first surface 212. For example, the insulating layers 220 band 225 b and the electrodes 230 b and 235 b may be extended from anedge portion of the first surface 212 of the metal substrate 210 onto anedge portion of the second surface 214 through a lateral surface of themetal substrate 110. By the configuration, when the UVlight-emitting-device package is mounted on a hoard, such as a printedcircuit board, portions of the electrodes 230 b and 235 b extended ontothe second surface 214 may be contact points for connecting the printedcircuit board and the package. Accordingly, the UV light-emitting-devicepackage according to the present exemplary embodiment may be mounted andmodulated in the printed circuit board, and the like without anadditional connection means.

FIG. 9 is a conceptual diagram schematically illustrating a backlightmodule according to another further exemplary embodiment of the presentinvention.

Referring to FIG. 9, a reflective sheet 315 may be provided on a part ofa substrate 310, and a light guide plate 320 may be disposed on thereflective sheet 315. A UV light-emitting-device package 300 may bestacked on another part of the substrate 310. For example, the UVlight-emitting-device package 300 may be one of the UVlight-emitting-device packages of FIGS. 1 to 8. The UVlight-emitting-device package 300 may be connected to a printed circuitboard 312 to be mounted on the substrate 310.

For example, the substrate 310 may include a printed circuit board inwhich a predetermined circuit wire is formed. The printed circuit boardincluded in the case does not exist only under the light-emitting-devicepackage 300, but may be expanded up to a lower side of the reflectivesheet 315, and may not be expanded up to the lower side of thereflective sheet 315, but may exist only on a lateral surface of thereflective sheet 315.

FIG. 11 is an exploded perspective view illustrating a part of alight-emitting-device package 100 according to some exemplaryembodiments of the present invention. Further, FIG. 12 is across-sectional view taken along line II-II of the light-emitting-devicepackage 100 of FIG. 11, and FIG. 13 is a top plan view illustrating thelight-emitting-device package 100 of FIG. 11.

First, as illustrated in FIGS. 11 to 13, the light-emitting-devicepackage 100 according to some exemplary embodiments of the presentinvention may generally include a metal substrate 10, an insulatinglayer 11, an aluminum reflective layer 12, a first electrode layer E1, asecond electrode layer E2, and a light emitting device 20. The lightemitting device 20 may emit at least UV light.

Here, the metal substrate 10 may accommodate the light emitting device20, and is electrically insulated from the light emitting device 20 bythe insulating layer 11, so that the metal substrate 10 may be formed ofa material having appropriate mechanical strength so as to support thelight emitting device 20.

For example, a metal substrate, such as aluminum, copper, zinc, tin,lead, gold, and silver, which has excellent thermal conductivity and maybe insulation-processed, and metal plates shaped like a plate or a leadframe may be applied to the metal substrate 10.

Further, the metal substrate 10 may be a flexible printed circuit board(FPCB) formed of a flexible material.

In addition, the metal substrate 10 may not only include a metal, andmay partially include a synthetic resin, such as resin, glass, and epoxyor a ceramic material considering thermal conductivity, and may includeone or more materials selected from an epoxy mold compound (EMC),polyimide (PI), graphene, synthetic glass fiber, and combinationsthereof in order to improve processability.

Further, the insulating layer 11 is an insulator surrounding the metalsubstrate 10, and may be formed by oxidizing the metal substrate 10.When the metal substrate 10 includes aluminum among the metals, theinsulating layer 11 may include alumina that is an aluminum oxide.Various methods may be applied to the oxidization method, but theinsulating layer 11 may be formed by oxidizing an aluminum component onthe surface of the metal substrate 10 by using the anodizing method.That is, here, the metal substrate 10 may include an aluminum component,and the insulating layer 11 may be an aluminum oxide layer. In thiscase, the insulating layer 11 may be entirely formed on the wholesurface of the metal substrate 10, and in addition, the insulating layer11 may be entirely formed except for a part fixing the metal substrate10 for oxidization work. In addition, the insulating layer 11 may beformed of a silicon oxide, a silicon nitride, and the like, and formedby using a printing method, such as a jet printing method.

Further, as illustrated in FIGS. 11 to 13, the aluminum reflective layer12 may be a reflective layer installed at an area of at least 170% ormore of a light emitting device seating part of the insulating layer 11.

Here, the light emitting device seating part may refer to a whole uppersurface of the metal substrate 10 on which the light emitting device 20is seated.

Particularly, aluminum among the metals shows generally reflectance ofabout 85% or more with respect to light including UV light, so thataluminum belongs to a metal having high reflectance. Further,reflectance of copper is about 59% and reflectance of alumina is about30%, so that the reflectance of copper and alumina is lower than thereflectance of the aluminum. Accordingly, it may be advantageous thatthe aluminum reflective layer 12 including aluminum having relativelyhigh reflectance is installed on the insulating layer 11, and areas ofthe insulating layer 11, the first electrode layer E1, and the secondelectrode layer E2 having relatively low reflectance are minimized.

In the meantime, a metal material generally has high reflectance withrespect to a long wavelength than a short wavelength. Aluminum also hashigh reflectance with respect to a long wavelength than a shortwavelength, but when a graph is drawn with a horizontal axis that is anaxis along which a wavelength is increased and a vertical axisindicating reflectance, an inclination of aluminum is smaller than thoseof other general metals. This means that reflectance of aluminum withrespect to a short wavelength is relatively high than reflectance ofother metal materials.

Accordingly, in a case where the light emitting device 20 mainly emitslight of a short wavelength, the metal substrate 10 includes aluminum,and the aluminum reflective layer 12 is formed as described above,thereby remarkably improving reflectance. In this case, the lightemitting device 20 may include a UV LED capable of emitting lightincluding a wavelength of 100 nm or more and 420 nm or less, which is ashort wavelength.

Here, the light emitting device 20 does not essentially emit only lightof a short wavelength, but may emit light of a long wavelength, but maymainly emit far UV light of a wavelength of 100 nm or more and 420 nm orless, particularly, 200 to 380 nm.

Further, a thermal compression processing method, a plating processingmethod, a bonding processing method, a sputtering processing method,other etching processing methods, a printing processing method, a sprayprocessing method, and the like may be used as the method of forming thealuminum reflective layer 12.

Further, the aluminum reflective layer 12 may be generally formed arounda rear surface 20 b of the light emitting device 20 in a circular shapeso as to reflect light generated by the light emitting device 20 asillustrated in FIGS. 11 and 13.

Further, as illustrated in FIG. 12, the aluminum reflective layer 12 maybe installed between the first electrode layer E1 and the insulatinglayer 11 so as to be electrically connected with the first electrodelayer E1.

Further, as illustrated in FIGS. 11 and 13, the aluminum reflectivelayer 12 may be provided with an electrode separation line S at a centerportion of the aluminum reflective layer 12 so as to be insulated fromthe second electrode layer E2, and may include a first reflective layer12-1 installed at one side and a second reflective layer 12-2 installedat the other side based on the electrode separation line S.

Accordingly, the first reflective layer 12-1 of the aluminum reflectivelayer 12 may be shaped like a circle of which a part is cut by theelectrode separation line S, and the second reflective layer 12-2 of thealuminum reflective layer 12 may be shaped like a remaining circle.

Here, the aluminum reflective layer 12 may be installed at an area of170% or more of the light emitting device seating part, and it may beadvantageous that the aluminum reflective layer 12 is installed at amaximum area of a portion, except for the electrode separation line S,the first electrode layer E1, and the second electrode layer E2.

Further, the first reflective layer 12-1 may be electrically connectedwith the first electrode layer E1, and the second reflective layer 12-2may be electrically connected with the second electrode layer E2. Here,the first reflective layer 12-1 and the second reflective layer 12-2 ofthe aluminum reflective layer 12 may be insulated from each other by theelectrode separation line S formed therebetween.

However, the shape of the aluminum reflective layer 12 of thelight-emitting-device package 100 according to some exemplaryembodiments of the present invention is not essentially limited to FIGS.11 to 13.

FIG. 14 is a top plan view illustrating a light-emitting-device package200 according to some other exemplary embodiments of the presentinvention.

As illustrated in FIG. 14, an aluminum reflective layer 12 of thelight-emitting-device package 200 according to some other exemplaryembodiments of the present invention may be a form in which theaforementioned first reflective layer 12-1 and second reflective layer12-2 are combined in one circular shape without necessity of forming aseparate electrode separation line S.

FIG. 15 is a top plan view illustrating a light-emitting-device package300 according to some other exemplary embodiments of the presentinvention.

As illustrated in FIG. 15, an aluminum reflective layer 12 of thelight-emitting-device package 300 according to some other exemplaryembodiments of the present invention may include a first reflectivelayer 12-1 generally shaped like a quadrangle and a second reflectivelayer 12-2 generally shaped like a quadrangle, based on an electrodeseparation line S.

In addition, the aluminum reflective layer 12 may have various shapes,such as an elliptical shape, a polygonal shape, a combined shape, andvarious geometric shapes, as well as a circular shape and a quadrangularshape, and the electrode separation line S may also be formed in veryvarious shapes, such as a curve shape, a bent shape, and a waveform, nota straight shape, or may be omitted.

Further, as illustrated in FIGS. 11 to 13, the first electrode layer E1is installed at one side of the insulating layer 11, and the secondelectrode layer E2 is installed at the other side of the insulatinglayer 11, and the first electrode layer E1 is formed on the insulatinglayer 11 in a shape extended from one side of a front surface 10 a ofthe metal substrate 10 onto one side of a rear surface 10 b of the metalsubstrate 10, and the second electrode layer E2 is formed on theinsulating layer 11 in a shape extended from the other side of the frontsurface 10 a of the metal substrate 10 to the other side of the rearsurface 10 b of the metal substrate 10.

Here, the first electrode layer E1 and the second electrode layer E2 maybe installed in a form of a wire layer of a conductive layer pattern.The wire layer may be formed of one or more selected from copper,aluminum, and a combination thereof having excellent thermalconductivity and relatively cheap.

In this case, a thermal compression processing method, a platingprocessing method, a bonding processing method, a sputtering processingmethod, other etching processing methods, a printing processing method,a spray processing method, and the like may be used as a method offorming the pattern.

In the meantime, as illustrated in FIGS. 11 to 15, the light emittingdevice 20 may be a UV LED which is seated on the light emitting deviceseating part, is electrically connected with the first electrode layerE1 and the second electrode layer E2, and emits UV light including awavelength of 100 nm or more and 420 nm or less.

Here, a first electrode pad P1 and a second electrode pad P2, to whichwires W may be connected, may be formed on a front surface 20 a of thelight emitting device 20, and an insulating bonding medium may beinstalled on a rear surface 20 b of the light emitting device 20.

Further, the light emitting device 20 may have a horizontal shape, avertical shape, or a flip chip shape requiring no wire W. The lightemitting device 20 may be provided with various bumps or a signaltransmitting medium, such as a solder, and various types of lightemitting device may be applied to the light emitting device 20.

Further, the light emitting device 20 may be seated on the metalsubstrate 10, and FIG. 11 illustrates a state where one light emittingdevice 20 is seated on the metal substrate 10, but in addition, aplurality of light emitting devices 20 may be seated on the metalsubstrate 10.

The light emitting device 20 may be formed of a semiconductor. Forexample, an LED which is formed of a nitride semiconductor and emits UVlight, and the like may be applied to the light emitting device 20. Thenitride semiconductor may be expressed by the Formula,Al_(x)Ga_(y)In_(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1).

Further, the light emitting device 20 may be configured, for example, byepitaxially growing a nitride semiconductor, such as InN, AlN, InGaN,AlGaN, and InGaAlN, on a sapphire substrate or a silicon carbidesubstrate for growing by a vapor growing method, such as metal organicchemical vapor deposition (MOCVD) method. Further, the light emittingdevice 20 may be formed of a semiconductor, such as ZnO, ZnS, ZnSe, SiC,GaP, GaAlAs, and AlInGaP, in addition to the silicon semiconductor. Astack structure, in which an n-type semiconductor layer, a lightemitting layer, and a p-type semiconductor layer are sequentiallyformed, may be used as the semiconductor. A stacked semiconductorincluding a multi quantum well structure or a single quantum wellstructure or a stacked semiconductor having a double hetero structuremay be used as the light emitting layer (active layer). Further, adevice having a predetermined wavelength may be selected as the lightemitting device 20 according to a use, such as a display use or alighting use.

Here, an insulating substrate, a conductive substrate, or asemiconductor substrate may be used as the substrate for growing asnecessary. For example, the substrate for growing may be sapphire, SiC,Si, MgAl₂O₄, MgO, LiAlO₂, LiGaO₂, and GaN. In order to epitaxiallygrowing a GaN material, a GaN substrate that is a homogeneous substratemay be used, but there is a problem in that it is difficult tomanufacture a GaN substrate, so that production cost of the GaNsubstrate becomes high.

Further, a sapphire substrate, a silicon carbide (SiC) substrate, andthe like are mainly used as the heterogeneous substrate, and a sapphiresubstrate is more widely utilized than an expensive silicon carbidesubstrate. When the heterogeneous substrate is used, a defect, such asdislocation, is increased due to a difference in a lattice constantbetween a substrate material and a thin film material. Further, warpageis generated when a temperature is changed due to a difference in athermal expansion coefficient between a substrate material and a thinfilm material, and the warpage causes cracks of the thin film. Theaforementioned problem may also be decreased by using a buffer layerbetween the substrate and the GaN based light emitting stack structure.

Further, in order to improve an optical or electrical characteristic ofan LED chip before or after growing an LED structure, the substrate forgrowing may be completely or partially removed or patterned during achip manufacturing process.

For example, a sapphire substrate may be separated by irradiating laserto an interface with the semiconductor layer through the substrate, anda silicon or silicon carbide substrate may be removed by a method, suchas polishing/etching.

Further, when the substrate for growing is removed, another supportingsubstrate may be used, and in order to improve light efficiency of anLED chip at an opposite side of the original substrate for growing, thesupporting substrate may be bonded by using a reflective metal or areflective structure may be inserted into a center of an adhesive layer.

Further, patterning of the substrate for growing forms concave-convexportions or an inclined surface on a main surface (a surface or bothsurfaces) or a lateral surface of the substrate before or after an LEDstructure is grown, thereby improving light extraction efficiency. Asize of pattern may be selected from a range of 5 nm to 500 μm, and aslong as a regular or irregular pattern has a structure for improvinglight extraction efficiency, the regular or irregular pattern may beavailable. The pattern may adopt various shapes, such as a pillar, amountain, a hemisphere shape, or a polygonal shape.

The sapphire substrate is a crystal having hexa-Rhombo R3c symmetry, haslattice constants in a c-axis direction and an a-axis direction of13.001 and 4.758, respectively, and has a surface C, a surface A, asurface R, and the like. In this case, the surface C comparativelyeasily grows a nitride thin film and is stable at a high temperature, sothat the surface C is mainly used as a substrate for growing a nitride.

Further, another material of the substrate for growing may be a Sisubstrate, and is more appropriate for a large aperture and isrelatively cheap, so that mass production may be improved.

Further, the silicon (Si) substrate absorbs light generated by the GaNbased semiconductor, so that external quantum efficiency of the lightemitting device is decreased, and thus the metal substrate is removedand the supporting substrate, such as a Si, Ge, SiAl, ceramic, or metalsubstrate including a reflective layer is additionally formed and usedas necessary.

When a GaN thin film is grown on a heterogeneous substrate, such as theSi substrate, a dislocation density may be increased due to discordanceof a lattice constant between a substrate material and a thin filmmaterial, and cracking and warpage may be generated due to a differencein a thermal expansion coefficient. A buffer layer may be disposedbetween the substrate for growing and the light emission stack structurefor the purpose of preventing dislocation and cracks of the lightemission stack structure. The buffer layer serves to adjust a warpagedegree of the substrate when the active layer is grown and decrease awavelength distribution of a wafer.

Here, the buffer layer may use Al_(x)In_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,x+y≦1), particularly, GaN, AlN, AlGaN, InGaN, or InGaNAlN, and may alsouse a material, such as ZrB₂, HfB₂, ZrN, HfN, and TiN as necessary.Further, the buffer layer may also be used by combining a plurality oflayers or gradually changing a composition thereof.

In the meantime, as illustrated in FIG. 13, marginal protrusions 30protruding by a marginal length L1 from a lateral surface of the metalsubstrate 10 may be formed at a lateral side of the metal substrate 10so as to prevent cracks of the insulating layer 11 from being spreadwhen the individual metal substrate 10 is cut from a substrate strip SS.

Accordingly, when the substrate strip SS is cut along cut lines C1 andC2 by using cutting equipment, even though cracks are generated at apart of the insulating layer 11, the cracks only stay in regions aroundthe marginal protrusions 30, so that it is possible to prevent thecracks from being spread up to the insulating layer 11 on the metalsubstrate 10 and prevent a defect, such as a short-circuit, from beinggenerated.

In the meantime, as illustrated in FIG. 21, a fluorescent substance 40may be installed around the light emitting device 20. The fluorescentsubstance 40 may have a composition formula and colors representedbelow.

Oxide-basis: Yellow and green Y₃Al₅O₁₂:Ce, Tb₃Al₅O₁₂:Ce, Lu₃Al₅O₁₂:Ce

Sililcate-basis: Yellow and green (Ba,Sr)₂SiO₄:Eu, yellow and orange(Ba,Sr)₃SiO₅:Ce

Nitride-basis: Green β-SiAlON:Eu, yellow L₃Si₆O₁₁:Ce, orangeα-SiAlON:Eu, red CaAlSiN₃:Eu, Sr₂Si₅N₈:Eu, SrSiAl₄N₇:Eu

The composition of the fluorescent substance 40 basically needs to be inaccordance with stoichiometry, and respective elements are capable ofbeing substituted with other elements within respective groups of theperiodic table. For example, Sr may be substituted with Ba, Ca, Mg, andthe like within an alkaline earth(II) group, and Y may be substitutedwith Tb, Lu, Sc, Gd, and the like based on lanthanum. Further, Eu andthe like, which are activators, may be substituted with Ce, Tb, Pr, Er,and Yb according to a desired energy level, and the activator may besolely applied or a sub activator and the like may be additionallyapplied for transforming a characteristic.

Further, materials, such as quantum dot (QD), may be applied as asubstituent material of the fluorescent substance 40, and thefluorescent substance 40 and the QD may be mixed and used or separatelyused in the LED.

The QD may be formed in a structure including a core (3 to 10 nm) ofCdSe, InP, and the like, a shell (0.5 to 2 nm) of ZnS, ZnSe, and thelike, and a regand for stabilizing the core and the shell, and mayimplement various colors according to a size thereof.

Further, a method of applying the fluorescent substance 40 or thequantum dot may use at least one of a method of spraying the fluorescentsubstance 40 or the quantum dot onto the LED chip or the light emittingdevice, a method of covering the LED chip or the light emitting devicewith the fluorescent substance 40 or the quantum dot in a film type, anda method of attaching a film or sheet type ceramic fluorescent substanceor the like onto the LED chip or the light emitting device.

The spraying method generally includes dispensing, spray coating, andthe like, and the dispensing includes a pneumatic method, a mechanicalmethod, such as a screw type and a linear type. It is possible tocontrol the amount of dotting through discharge of a tiny amount andcontrol a color coordinate through the control by a jetting method. Amethod of applying a fluorescent substance on a wafer level or a lightemitting device substrate in a lump by a spray method may be easy tocontrol productivity and a thickness.

An electrophoretic method, a screen printing method, or a fluorescentmolding method may be applied to the method of directly covering thelight emitting device 20 or the LED chip with the fluorescent substance40 or the quantum dot in a film type, and the corresponding method maybe different according to whether it is necessary to apply thefluorescent substance or the quantum dot onto the lateral surface of theLED chip.

In order to control efficiency of a long wavelength light emittingfluorescent substance, which re-absorbs light emitted at a shortwavelength, among the two or more types of fluorescent substances havingdifferent light emission wavelengths, it is possible to divide two ormore types of fluorescent substance layers having different lightemission wavelengths, and in order to minimize wavelength re-absorptionand interference of the LED chip and the two or more types offluorescent substances, a DBR (ODR) layer may be included between therespective layers.

In order to form a uniform coating layer, the fluorescent substance maybe manufactured in a film type or a ceramic type, and then attached ontothe LED chip or the light emitting device.

In order to make a difference in light efficiency and a lightdistribution characteristic, an optical conversion material may bepositioned by a remote type, and in this case, the optical conversionmaterial is positioned together with a material, such as alighttransmissive polymer and glass, according to durability and heatresistance.

The technique of applying the fluorescent substance 40 is most importantin determining a light characteristic in the light emitting device, sothat control techniques for a thickness of a fluorescent substanceapplied layer, uniform distribution of a fluorescent substance, and thelike have been variously researched. The QD may also be positioned onthe LED chip or the light emitting device by the same method as that ofthe fluorescent substance, and the QD may be positioned between glass orlight transmissive polymer materials to convert light.

Further, as illustrated in FIGS. 12 and 21, a lens 50 may be installedaround the light emitting device 20.

Here, the lens 50 may guide a path of UV light generated by the lightemitting device 20, and glass, a epoxy resin composition, a siliconresin composition, a modified epoxy resin composition, such as a siliconmodified epoxy resin, a modified silicon resin composition, such as anepoxy modified silicon resin, a polyimide resin composition, a modifiedpolyimide resin composition, polyphthalamide (PPA), a polycarbonateresin, a polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), anABS resin, a phenol resin, an acrylic resin, a PBT resin, and the likemay be applied to the lens 50.

Further, although not illustrated in the drawing, in addition to thelens 50, various types of component, such as various reflection members,a light transmissive encapsulation material, and a lightnon-transmissive encapsulation material, may be installed around thelight emitting device 20.

In the meantime, although not illustrated in the drawings, alight-emitting-device package according to some exemplary embodiments ofthe present invention may include a metal substrate 10, an insulatinglayer 11 surrounding the metal substrate 10, a light emitting device 20seated on a light emitting device seating part of the insulating layer11, a first electrode layer E1 installed at one side of the insulatinglayer 11 and electrically connected with the light emitting device 20, asecond electrode layer E2 installed at the other side of the insulatinglayer 11 and electrically connected with the light emitting device 20,and marginal protrusions 30 installed at a lateral side of the metalsubstrate 10 and protruding by a marginal length L1 from a lateralsurface of the metal substrate 10 in a lateral direction so as toprevent cracks of the insulating layer 11 when the individual metalsubstrate 10 is cut from a substrate strip SS. Here, the metal substrate10, the insulating layer 11, the light emitting device 20, the firstelectrode layer E1, the second electrode layer E2, and the marginalprotrusion 30 may have the same configurations and perform the samefunctions as those described with reference to FIGS. 11 to 15.Accordingly, detailed descriptions thereof will be omitted. Accordingly,the light-emitting-device packages according to some or some otherexemplary embodiments of the present invention do not essentiallyinclude the aforementioned aluminum reflective layer 12.

FIGS. 16 to 21 are cross-sectional views sequentially illustrating amanufacturing process of the light-emitting-device package 100 accordingto some exemplary embodiments of the present invention.

Referring to FIGS. 16 to 21, first, as illustrated in FIG. 16, the metalsubstrate strip SS formed of an aluminum material in which theindividual metal substrates 10 are connected with each other may beprepared.

In this case, the metal substrate strip SS may have a form in which theplurality of metal substrates 10 of FIG. 13 is disposed in a matrix formand connected with each other by bridges and the like formed on lateralsurfaces of the metal substrates 10.

Next, as illustrated in FIG. 17, the alumina insulating layer 11 that isan aluminum oxide may be formed by oxidizing the metal substrate stripSS so that the insulating layer 11 is formed in the metal substratestrip SS.

Next, as illustrated in FIG. 18, the aluminum reflective layer 12 may beinstalled on the light emitting device seating part of the insulatinglayer 11.

Here, the aluminum reflective layer 12 may be installed on theinsulating layer 11 by a thermal compression processing method, aplating processing method, a bonding processing method, a sputteringprocessing method, other etching processing methods, a printingprocessing method, a spray processing method, and the like.

Next, as illustrated in FIG. 19, the first electrode layer E1 may beinstalled at one side of the insulating layer 11, and the secondelectrode layer E2 may be installed at the other side of the insulatinglayer 11.

Here, the first electrode layer E1 and the second electrode layer E2 mayalso be installed on the insulating layer 11 by a thermal compressionprocessing method, a plating processing method, a bonding processingmethod, a sputtering processing method, other etching processingmethods, a printing processing method, a spray processing method, andthe like.

Next, as illustrated in FIG. 20, the light emitting device 20 is seatedon the light emitting device seating part by using a die bondingapparatus, wiring equipment, and the like, and various signaltransmission media, such as a wire S, may be installed in the lightemitting device 20, the fluorescent substance 40 may be installed in thelight emitting device 20, or the lens 50, other reflective members, anencapsulation material, and the like may be additionally installed inthe light emitting device 20.

Next, as illustrated in FIG. 21, the metal substrate strip SS may be cutby using cutting equipment so that the marginal protrusions 30protruding by the marginal length L1 from the lateral surface of themetal substrate 10 in a lateral direction may be formed at the lateralside of the metal substrate strip SS in order to prevent cracks of theinsulating layer 11.

FIG. 22 is a flowchart illustrating a method of manufacturing thelight-emitting-device package 100 according to some exemplaryembodiments of the present invention.

As illustrated in FIGS. 16 to 22, the method of manufacturing thelight-emitting-device package 100 according to some exemplaryembodiments of the present invention may include an operation S1 ofpreparing the metal substrate strip SS formed of the aluminum material,in which the individual metal substrates 10 are connected with eachother, an operation S2 of oxidizing the metal substrate strip SS so thatthe insulating layer 11 is formed on the metal substrate strip SS, anoperation S3 of installing the aluminum reflective layer 12 on the lightemitting device seating part of the insulating layer 11, an operation S4of installing the first electrode layer E1 at one side of the insulatinglayer 11 and installing the second electrode layer E2 at the other sideof the insulating layer 11, an operation S5 of seating the lightemitting device on the light emitting device seating part, and anoperation S6 of cutting the metal substrate strip SS so that themarginal protrusions 30 protruding by the marginal length L1 from thelateral surface of the metal substrate 10 in a lateral direction may beformed at the lateral side of the metal substrate strip SS in order toprevent cracks of the insulating layer 11.

Here, the operation S3 of installing the aluminum reflective layer 12 onthe light emitting device seating part of the insulating layer 11 may beperformed after the operation S4 of installing the first electrode layerE1 at one side of the insulating layer 11 and installing the secondelectrode layer E2 at the other side of the insulating layer 11.

In the meantime, although not illustrated in the drawing, a backlightunit including the light-emitting-device package 100 according to someexemplary embodiments of the present invention may further include alight guide plate in addition to the aforementioned configurations.

The backlight unit is installed in an LCD panel and allows light to passthrough in a direction of the LCD panel, and may be installed in a pathof light generated by the light emitting device 20 and transmit thelight generated by the light emitting device 20 to a wider area.

Further, although not illustrated in the drawing, a polycarbonate-basedmaterial, a polysulphone-based material, a polyacrylate-based material,a polystylene-based material, a polyvinyl chloride-based material, apolyvinyl alcohol-based material, a polynorbonene-based material, apolyester, and the like may be applied as a material of the light guideplate, and in addition, various light transmissive resin-based materialsmay be applied as the material of the light guide plate. Further, thelight guide plate 50 may be formed by various methods, such as a methodof forming micro patterns, micro protrusions, a diffusion layer, and thelike on a surface thereof or a method of forming micro bubbles therein.

The backlight unit according to some exemplary embodiments of thepresent invention may be a direct type backlight unit in which the lightemitting device 20 is installed at a lower side of the light guideplate, or an edge type backlight unit in which the light emitting device20 is installed at a lateral side of the light guide plate.

In the meantime, although not illustrated in the drawing, thelight-emitting-device package 100 according to an exemplary embodimentof the present invention may be used in various devices, such as a UVcuring device, a UV sterilizing device, or a technical field in which UVlight may be used.

The present invention has been described with reference to the exemplaryembodiments illustrated in the drawings, but the exemplary embodimentsare only illustrative, and it would be appreciated by those skilled inthe art that various modifications and equivalent exemplary embodimentsmay be made. Therefore, the true technical scope of the present shouldbe defined by the technical spirit of the appended claims.

1-19. (canceled)
 20. A light emitting device package comprising: asubstrate including a first surface and a second surface opposed to thefirst surface; a reflective layer formed over the first surface; a lightemitting device disposed on the reflective layer with an adhesive memberdisposed between the light emitting device and the reflective layer, thelight emitting device being coupled to electrodes; and a dam structurehaving an internal region associated with the light emitting device, thedam structure being disposed on the electrodes on the first surface ofthe substrate, wherein the substrate includes at least one marginalprotrusion that protrudes by a marginal length from the lateral surface.21. The light emitting device package of claim 20, wherein thereflective layer comprises a first part on which the light emittingdevice mounts and a second part which is separated from the first partby a separation line.
 22. The light emitting device package of claim 21,further comprising a first electrode layer disposed on the reflectivelayer and electrically connected to a first electrode pad of the lightemitting device and a second electrode layer disposed on the reflectivelayer connected to a second electrode pad of the light emitting device.23. The light emitting device package of claim 22, wherein a portion ofthe first part of the reflective layer is disposed between a portion ofthe first electrode layer and the substrate.
 24. The light emittingdevice package of claim 22, wherein a portion of the second part of thereflective layer is disposed between a portion of the second electrodelayer and the substrate.
 25. The light emitting device package of claim20, wherein the substrate includes a metal substrate and an insulationlayer is disposed on the metal substrate.
 26. The light emitting devicepackage of claim 25, wherein the insulation layer includes an aluminumoxide layer.
 27. The light emitting device package of claim 20, whereinthe internal region of the dam structure is configured to serve as alight emitting part associated with light emission or reflection of thelight emitting device.
 28. The light emitting device package of claim27, wherein when the light emitted from the light emitting device isreflected in a direction of the light emitting device, the light isre-reflected from the internal region of the dam structure.
 29. Thelight emitting device package of claim 20, wherein the reflective layeris in a substantially circular shape, a substantially quadrangular shapeor a substantially elliptical shape.
 30. A light emitting devicepackage, comprising: a substrate comprising a first surface and a secondsurface opposed to the first surface, wherein the substrate includes acavity in a direction of the first surface; an insulation layer disposedoutside the cavity and covering at least a portion of the first surfaceand at least a portion of the second surface; a light emitting devicemounted on a bottom surface of the cavity, and a pair of electrodescoupled to the light emitting device, wherein the substrate includes atleast one marginal protrusion that protrudes by a marginal length fromthe lateral surface, and an end surface of the at least one marginalprotrusion is exposed outside the insulation layer.
 31. The lightemitting device package of claim 30, wherein the insulation layercomprises a cut surface coplanar with the end surface along a cuttingline C1 or C2.
 32. The light emitting device package of claim 30,wherein the substrate comprises a lead frame.
 33. The light emittingdevice package of claim 30, wherein the pair of electrodes is disposedon the insulation layer, and the insulation layer is disposed betweeneach of the electrode pads and the substrate.
 34. The light emittingdevice package of claim 33, wherein the insulation layer and the pair ofelectrodes are extended from the first surface onto the second surface.35. The light emitting device package of claim 33, wherein the pair ofelectrodes is disposed to be spaced apart from each other with thecavity being disposed therebetween.
 36. The light emitting devicepackage of claim 30, wherein at least one of the electrodes includes anedge adjacent to an edge of the cavity on the first surface.
 37. Thelight emitting device package of claim 30, wherein the light emittingdevice is an ultraviolet (UV) light emitting device.